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TAN21 22261 1630C PIC18F6 C1458 LTR10EZP C1458 E004119
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  20.0a glass passivated super fast rectifier cas m ounting position: any polarity: see diagram terminals: plated leads solderable per high surge current capability low forward voltage drop glass passivated die construction lead free: for rohs / lead free version feat ures ! ! s u p e r-fast switching ! ! low reverse leakage current ! ! plastic material has ul flammability classification 94v-o  m e chanical data ! ! mil- st d-202, method 208 ! ! ! m aximum r atings and electrical characteristics @t a =2 5 c unless otherwise specified single phase, half wave, 60hz, resistive or inductive load. for capacitive load, derate current by 20%. not e: 1. measured with if = 0.5a, ir = 1.0a, irr = 0.25a. 2. measured at 1.0 mhz and applied reverse voltage of 4.0v d.c. 1 of 2 z ibo seno electronic engineering co., ltd. www.senocn.com -55 to +150 symbol v rrm v rms v dc if (av) i fsm v f i r trr c j t j , t stg 20.0 10.0 1.0 250 unit v v v v a a ua ua o c pf o cw ns maximum recurrent peak reverse voltage maximum rms voltage maximum dc blocking voltage maximum average forward rectified peak forward surge current, 8.3ms single maximum instantaneous forward voltage maximum dc reverse current @t j =25 o c typical junction capacitance (note 2) operating junction and storage current t c =100 o c half sine-wave superimposed on rated load (jedec method) @10.0 a at rated dc blocking voltage @t j =125 o c maximum reverse recovery time (note 1) typical thermal resistance (note 3) r jc temperature range characterisic 2010ct 2020ct 2030ct 2040ct 2050ct 2060ct 70 140 100 200 300 210 300 500 350 100 200 500 600 420 600 400 280 400 3.5 90 1.3 1.7 35 170 130 sfb2010ct-sfb2060ct sfb2010ct-sfb2060ct e: to-263(d pak), molded plastic to-263 (d pak) 2 2 sfb sfb sfb sfb sfb sfb
 2 of 2 z ibo seno electronic engineering co., ltd. www.senocn.com sfb2010ct ? sfb2060ct sfb2010ct ? sfb2060ct 0 4 8 12 16 20 0 50 100 150 i , a verage forward current (a) (av) t , case tempera ture ( c) fig. 1 forward current derating curve c 30 60 90 0 120 150 180 1 10 100 i , peak for ward surge current (a) fsm number of cycles a t 60hz fig. 3 max non-repetitive surge current 8.3 ms single half-sine-wave jedec method 10 100 400 0.1 1.0 10 100 v , reverse voltage (v) fig. 4 typical junction capacitance r 2030 - 2060 201 0 - 2020 c , cap acit ance (pf) j 0.1 1.0 10 100 0.2 0.6 1.0 1.4 i , inst ant aneous forward current (a) f v , inst ant aneous forward voltage (v) fig. 2 typical forward characteristics f pulse width = 300 s 2% duty cycle m 2060 2030 - 2040 2010 - 1020


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